71112 tkim/o1911pe tkim tc-00002660 no.8993-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 ech8420 n-channel power mosfet 20v, 14a, 6.8m , single ech8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance r ds (on)1=5.2m (typ.) ? 1.8v drive. ? halogen free compliance. ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 12 v drain current (dc) i d 14 a drain current (pulse) i dp pw 10 s, duty cycle 1% 50 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1.6 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-002 ordering number : en8993a 1 : source 2 : source 3 : source 4 : gate 5 : drain 6 : drain 7 : drain 8 : drain ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view 87 6 5 12 3 4 product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection tl ECH8420-TL-H za lot no.
ech8420 no.8993-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =7a 14.5 s static drain-to-source on-state resistance r ds (on)1 i d =7a, v gs =4.5v 5.2 6.8 m r ds (on)2 i d =4a, v gs =2.5v 8 11.5 m r ds (on)3 i d =2a, v gs =1.8v 15 22.5 m input capacitance ciss v ds =10v, f=1mhz 2430 pf output capacitance coss 410 pf reverse transfer capacitance crss 330 pf turn-on delay time t d (on) see speci ed test circuit. 21 ns rise time t r 88 ns turn-off delay time t d (off) 210 ns fall time t f 115 ns total gate charge qg v ds =10v, v gs =4.5v, i d =14a 29 nc gate-to-source charge qgs 4.8 nc gate-to-drain ?miller? charge qgd 8.7 nc diode forward voltage v sd i s =14a, v gs =0v 0.75 1.2 v switching time test circuit ordering information device package shipping memo ECH8420-TL-H ech8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =7a r l =1.43 v dd =10v v out ech8420 v in 4.5v 0v v in
ech8420 no.8993-3/7 i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v it16531 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 21 20 19 17 18 15 13 10 16 12 14 11 7 5 1 3 8 9 6 2 4 -- 2 5 c 25 c ta=75 c v ds =10v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 4 6 8 2 14 12 10 0 it16625 0.4 0.2 0.1 0.6 0.8 0.5 0.3 0.7 0.9 1.0 v gs =1.5v 4.5v 10.0v 1.8v 2.5v 6.0v 8.0v static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta i s -- v sd source current, i s -- a diode forward voltage, v sd -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a 0 100 5 3 2 1000 10000 7 5 3 2 7 20 2 4 6 8 12 14 16 18 10 it16537 it16536 it16535 0 0.2 0.5 0.7 0.1 0.4 0.3 0.6 0.8 0.9 1.0 0.001 0.01 7 5 3 2 2 0.1 7 5 3 2 it16534 25 c --25 c f=1mhz ciss coss crss ta=75 c 0.01 0.1 2 23 57 1.0 2 357 2 10 357 2 3 5 7 2 0.1 1.0 2 3 5 7 10 3 5 7 100 v ds =10v ta= --25 c 75 c v gs =0v 10 3 2 100 1000 5 7 3 2 5 7 0.1 1.0 2 23 57 10 357 2 100 357 v dd =15v v gs =10v t d (off) t f t d (on) t r it16533 --50 0 50 100 150 200 0 25 20 5 10 15 v gs =2.5v, i d =4a v gs =1.8v, i d =2a v gs =4.5v, i d =7a 100 357 25 c 1.0 100 7 5 3 2 1.0 7 5 3 2 7 5 3 gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m r ds (on) -- v gs it16532 0 0 40 35 12 246810 20 15 30 25 10 5 ta=25 c i d =2a 7a 4a
ech8420 no.8993-4/7 drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it16538 0 0 30 20 5 4.5 4.0 3.5 3.0 2.5 2.0 1.5 0.5 1.0 25 15 10 0.01 0.1 1.0 23 57 23 57 23 57 23 5 10 100 7 0.01 0.1 1.0 10 100 7 5 3 2 7 5 3 2 7 5 3 2 5 7 3 2 i dp =50a (pw 10 s) i d =14a 100ms 1ms 10ms operation in this area is limited by r ds (on). dc operation (ta=25 c) it16539 v ds =10v i d =14a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) a s o ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it16540 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 when mounted on ceramic substrate (900mm 2 0.8mm)
ech8420 no.8993-5/7 embossed taping speci cation ECH8420-TL-H
ech8420 no.8993-6/7 outline drawing land pattern example ECH8420-TL-H mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65
ech8420 ps no.8993-7/7 note on usage : since the ech8420 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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